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| PD - 97157 IRLML0100TRPBF VDS VGS Max RDS(on) max (@VGS = 10V) HEXFET(R) Power MOSFET 100 16 220 235 V V m: m: G1 3D S 2 RDS(on) max (@VGS = 4.5V) Micro3TM (SOT-23) IRLML0100TRPBF Application(s) * Load/ System Switch Features and Benefits Features Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1 results in Benefits Multi-vendor compatibility Easier manufacturing Environmentally friendly Increased reliability Absolute Maximum Ratings Symbol VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 100 1.6 1.3 7.0 1.3 0.8 0.01 16 -55 to + 150 Units V A W W/C V C Thermal Resistance Symbol RJA RJA Parameter Junction-to-Ambient e Typ. --- --- Max. 100 99 Units C/W Junction-to-Ambient (t<10s) f ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 www.irf.com 1 11/24/09 IRLML0100TRPBF Electric Characteristics @ TJ = 25C (unless otherwise specified) Symbol V(BR)DSS Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Units 100 --- --- --- 1.0 --- --- --- --- --- 5.7 --- --- --- --- --- --- --- --- --- --- --- 0.10 190 178 --- --- --- --- --- 1.3 --- 2.5 0.5 1.2 2.2 2.1 9.0 3.6 290 27 13 --- --- 235 220 2.5 20 250 100 -100 --- --- --- --- --- --- --- --- --- --- --- --- pF ns nC S nA V Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 1.3A VGS = 10V, ID = 1.6A VDS = VGS, ID = 25A VDS =100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125C VGS = 16V VGS = -16V VDS = 50V, ID = 1.6A ID = 1.6A VDS =50V VGS = 4.5V ID = 1.0A RG = 6.8 VGS = 4.5V VGS = 0V VDS = 25V = 1.0MHz V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) VGS(th) IDSS IGSS RG gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance V/C Reference to 25C, ID = 1mA m V A d d d VDD =50Vd Source - Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 20 13 1.1 A 7.0 1.3 30 20 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 1.1A, VGS = 0V TJ = 25C, VR = 50V, IF=1.1A di/dt = 100A/s d d 2 www.irf.com IRLML0100TRPBF 100 60s PULSE WIDTH Tj = 25C ID, Drain-to-Source Current (A) TOP VGS 10.0V 4.50V 3.50V 3.30V 3.25V 2.50V 2.35V 2.25V 100 60s PULSE WIDTH Tj = 150C ID, Drain-to-Source Current (A) TOP VGS 10.0V 4.50V 3.50V 3.30V 3.25V 2.50V 2.35V 2.25V 10 BOTTOM 10 BOTTOM 1 1 2.25V 0.1 2.25V 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current(A) ID = 1.6A VGS = 10V 2.0 1 TJ = 150C 1.5 0.1 TJ = 25C 1.0 VDS = 50V 60s PULSE WIDTH 0.01 1.5 2.0 2.5 3.0 3.5 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLML0100TRPBF 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 16 VGS, Gate-to-Source Voltage (V) ID= 1.6A 12 1000 C, Capacitance (pF) VDS= 80V VDS= 50V VDS= 20V Ciss 100 8 Coss Crss 10 4 0 1 1 10 VDS , Drain-to-Source Voltage (V) 100 0 1 2 3 4 5 6 7 QG Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 10 TJ = 150C 1 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 10 100sec 1 1msec ISD, Reverse Drain Current (A) 0.1 TJ = 25C VGS = 0V 0.01 0.4 0.6 0.8 1.0 VSD , Source-to-Drain Voltage (V) 0.1 TA = 25C Tj = 150C Single Pulse 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 10msec Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLML0100TRPBF 2.0 V DS VGS ID , Drain Current (A) 1.5 RD RG VGS Pulse Width 1 s Duty Factor 0.1 % D.U.T. + - VDD 1.0 0.5 Fig 10a. Switching Time Test Circuit VDS 0.0 25 50 75 100 125 150 90% TA , Ambient Temperature (C) Fig 9. Maximum Drain Current Vs. Ambient Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1000 Thermal Response ( ZthJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLML0100TRPBF ( RDS(on), Drain-to -Source On Resistance m) ) RDS(on), Drain-to -Source On Resistance (m 600 550 500 450 400 TJ = 125C 350 300 250 200 150 2 4 6 8 10 TJ = 25C ID = 1.6A 270 250 Vgs = 4.5V 230 Vgs = 10V 210 190 170 0 2 4 ID, Drain Current (A) 6 8 VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Id Vds Vgs D L VCC DUT 0 Vgs(th) G S 20K 1K Qgodr Qgd Qgs2 Qgs1 Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com IRLML0100TRPBF 2.5 VGS(th), Gate threshold Voltage (V) 100 80 2.0 Power (W) 60 1.5 ID = 25uA ID = 250uA 1.0 40 20 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( C ) 0 1E-005 0.0001 0.001 0.01 0.1 1 10 Time (sec) Fig 15. Typical Threshold Voltage Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRLML0100TRPBF Micro3 (SOT-23) Package Outline Dimensions are shown in millimeters (inches) 6 D A 5 DIMENSIONS SYMBOL MILLIMETERS MIN MAX INCHES MIN MAX A A2 C 3 6 E1 1 2 E 0.15 [0.006] M C B A 0.10 [0.004] C A1 3X b 0.20 [0.008] M C B A 5 B e e1 NOTES: H4 L1 Recommended Footprint c 0.972 0.950 A A1 A2 b c D E E1 e e1 L L1 L2 0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0 1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8 ## 0.0004 # "$ # ! ! " ' ! '" # #& $$ "& 7T8 &$ 7T8A % !# ! REF BSC 0 8 "$ L2 3X L 7 0.802 2.742 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. 1.900 Micro3 (SOT-23/TO-236AB) Part Marking Information Notes : T his part marking information applies to devices produced after 02/26/2001 W = (1-26) IF PRECEDE D BY LAS T DIGIT OF CALE NDAR YEAR Y = YEAR W = WEE K YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WE EK 01 02 03 04 W A B C D PART NUMBER LOT CODE PART NUMBER CODE REF ERE NCE : A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML0100 L = IRLML0060 M = IRLML0040 N = IRLML2060 24 25 26 X Y Z W = (27-52) IF PRECEDE D BY A LET TE R YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WE EK 27 28 29 30 W A B C D Note: A line above the work week (as shown here) indicates Lead - Free. 50 51 52 X Y Z Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRLML0100TRPBF Micro3TM Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 1.32 ( .051 ) 1.12 ( .045 ) TR 3.55 ( .139 ) 3.45 ( .136 ) 8.3 ( .326 ) 7.9 ( .312 ) FEED DIRECTION 4.1 ( .161 ) 3.9 ( .154 ) 1.1 ( .043 ) 0.9 ( .036 ) 0.35 ( .013 ) 0.25 ( .010 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9 IRLML0100TRPBF Orderable part number IRLML0100TRPBF Qualification information Qualification level Cons umer (per JE DE C JE S D47F Package Type Micro3 Standard Pack Form Quantity Tape and Reel 3000 Note guidelines ) MS L1 Moisture Sensitivity Level RoHS compliant Micro3 (per IPC/JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Surface mounted on 1 in square Cu board Refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/2009 10 www.irf.com |
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